Room temperature oxidation of magnetron sputtered Si-C-N films

被引：4
|
作者：
Hueger, E. [1 ]
Gao, D. [1 ]
Markwitz, A. [2 ]
Geckle, U. [3 ]
Bruns, M. [3 ]
Schmidt, H. [1 ]
机构：
[1] Tech Univ Clausthal, Inst Met, D-38678 Clausthal Zellerfeld, Germany
[2] Natl Isotope Ctr, GNS Sci, Lower Hutt, New Zealand
[3] Karlsruher Inst Technol, Inst Angew Mat IAM WPT, Eggenstein Leopoldshafen, Germany
来源：
APPLIED SURFACE SCIENCE | 2012年 / 258卷 / 07期
关键词：
Silicon carbonitrides; Oxidation; X-ray reflectivity; Infra-red spectroscopy; AMORPHOUS-SILICON CARBONITRIDE; CERAMICS;
D O I：
10.1016/j.apsusc.2011.11.012
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
We produced nitrogen-and carbon-rich amorphous Si-C-N thin films of chemical composition Si19C21N60 by reactive magnetron co-sputtering on Si substrates and investigated their thermal stability in air at room temperature. Infra-red spectroscopy and X-ray reflectometry measurements demonstrated that the films show a pronounced oxidation in air already at room temperature, a behaviour which was previously not found for other compositions. A linear growth law is observed, which can be explained by a nano-porous structure of the formed SiO2 oxide scale. High-resolution atomic force microscopy indicated the presence of such a nano-porous structure with a pore diameter of 5 nm and a diameter of the pore walls of 3 nm. (C) 2011 Elsevier B.V. All rights reserved.
引用
收藏
页码：2944 / 2947
页数：4
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