Epitaxial growth of ZnO nanocrystals at ZnWO4(0 1 0) cleaved surface

被引：30
|
作者：
Atuchin, V. V. [1 ]
Galashov, E. N. [2 ]
Kozhukhov, A. S. [3 ,4 ]
Pokrovsky, L. D. [1 ]
Shlegel, V. N. [2 ]
机构：
[1] SB RAS, Lab Opt Mat & Struct, Inst Semicond Phys, Novosibirsk 630090, Russia
[2] SB RAS, Inst Inorgan Chem, Novosibirsk 630090, Russia
[3] SB RAS, Lab Nanodiagnost & Nanolithog, Inst Semicond Phys, Novosibirsk 630090, Russia
[4] Novosibirsk State Univ, Dept Phys, Novosibirsk 630090, Russia
来源：
JOURNAL OF CRYSTAL GROWTH | 2011年 / 318卷 / 01期
关键词：
Topotaxy; Tungstate; Zinc compounds; RAY PHOTOELECTRON-SPECTROSCOPY; CORE-LEVEL SPECTROSCOPY; SINGLE-CRYSTALS; KTIOPO4; SURFACE; RHEED ANALYSIS; WAVE-GUIDES; PHOTOEMISSION; LINBO3; TIO2;
D O I：
10.1016/j.jcrysgro.2010.10.172
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Precipitation of ZnO nanocrystals with diameter of 30-50 nm and height of 1-7 nm at ZnWO4(0 1 0) atomically flat surface annealed at T=500 degrees C by t=3.6 ks is detected by AFM and RHEED analyses. The epitaxial relation is found as ZnWO4(0 1 0)//ZnO(-1 1 0). This effect can be used for fabrication of ZnO nanocrystals on dielectric substrate. (C) 2010 Elsevier B.V. All rights reserved.
引用
收藏
页码：1147 / 1150
页数：4
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