Diode-pumped actively Q-switched Nd:GGG laser operating at 938 nm

被引：6
|
作者：
Wang, X. [1 ]
Eichler, H. J. [1 ]
Zhang, Zhiguo [2 ]
机构：
[1] Tech Univ Berlin, Inst Opt & Atomare Phys, D-10623 Berlin, Germany
[2] Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Inst Phys, Beijing 100080, Peoples R China
来源：
OPTICS AND LASER TECHNOLOGY | 2012年 / 44卷 / 02期
关键词：
Active Q-switch; Nd:GGG; Quasi-three-level; MODE; GGG; PERFORMANCE; INTENSITIES; GROWTH; YAG;
D O I：
10.1016/j.optlastec.2011.08.017
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
The stimulated emission cross-section of Nd:GGG crystal in 938 nm transition was measured by the amplifier approach. It is 2.3 x 10(-20) cm(2). A quasi-continuous-wave diode pumped, actively Q-switched Nd:GGG laser operating at 938 nm was demonstrated. Pumped by laser diodes with 900 W peak power and 300 mu s pulse duration, it generated 168 mJ energy in long pulse mode. The slope efficiency was 36%. Q-switched by a KD*P Pockels cell, 41 mJ output pulse energy was obtained. The pulse duration and peak power were 120 ns and 340 kW, respectively. The optical to optical efficiency was 7%. (C) 2011 Elsevier Ltd. All rights reserved.
引用
收藏
页码：476 / 481
页数：6
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