spin polarized transport in semiconductors;
spin transport through interfaces;
superlattices;
diluted magnetic semiconductors;
D O I:
暂无
中图分类号:
O64 [物理化学(理论化学)、化学物理学];
O56 [分子物理学、原子物理学];
学科分类号:
070203 ;
070304 ;
081704 ;
1406 ;
摘要:
We are concerned with nonlinear electron transport in magnetically doped II-VI semiconductor multiple quantum wells with the central well doped with Mn. A II-VI compound with Mn substituted at the group II site exhibits large band electron spin splittings at moderately low magnetic fields. We elaborate on a theory of the influence of exchange coupling with Mn ion spins on electric field domain formation and on the sensitivity of this influence to spin-relaxation rates within the quantum wells. The sequential tunneling current as well as the spin polarization in the magnetic well present a complicated behavior due to the interplay between Coulomb interaction, negative differencial conductance associated with resonant tunneling and exchange interaction between the band spin electrons and the local moments. We observe a significant drop of the spin polarization in the magnetic well at the dc bias where the domain wall is located in the magnetic well. At low doping levels conventional semiconductor superlattices exhibit self-sustained oscillations. We analyze the spin dynamics in these superlattices containing magnetic impurities.
机构:
Capital Normal Univ, Coll Elementary Educ, Beijing 100048, Peoples R ChinaCapital Normal Univ, Coll Elementary Educ, Beijing 100048, Peoples R China
Li, Chun-Lei
论文数: 引用数:
h-index:
机构:
Zheng, Jun
Wang, Xiao-Ming
论文数: 0引用数: 0
h-index: 0
机构:
China Univ Geosci, High Sch, Beijing 100083, Peoples R ChinaCapital Normal Univ, Coll Elementary Educ, Beijing 100048, Peoples R China
Wang, Xiao-Ming
Xu, Yan
论文数: 0引用数: 0
h-index: 0
机构:
Capital Normal Univ, Coll Elementary Educ, Beijing 100048, Peoples R ChinaCapital Normal Univ, Coll Elementary Educ, Beijing 100048, Peoples R China