Synthesis and optical properties of Mn doped ZnO thin films

被引：6

作者：

Chvostova, Dagmar ^{[1
]}

Dejneka, Alexandr ^{[1
]}

Hubicka, Zdenek ^{[1
]}

Churpita, Alexander ^{[1
]}

Bykov, Pavlo ^{[1
]}

Jastrabik, Lubomir ^{[1
]}

Trepakov, Vladimir A. ^{[1
,2
]}

机构：

[1] Inst Phys AS CR, Prague 18221 8, Czech Republic

[2] Ioffe Physicotech Inst RAS, St Petersburg 194021, Russia

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2011年 / 208卷 / 09期

关键词：

doping; optical properties; synthesis; ZnO thin films; FERROMAGNETISM; TEMPERATURE;

D O I：

10.1002/pssa.201026630

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Study of optical and electrical properties of Mn doped ZnO films deposited by atmospheric barrier torch discharge technique on SiO2 substrates is reported for a wide range of Mn concentration (0.2-20 at.%). It was found that the growth of all Mn-doped ZnO films contains secondary Mn2O3 phase even for the lowest manganese concentration (0.2%). When Mn concentration is in the range 0.2-4%, this secondary Mn2O3 phase does not conspicuously affect Raman spectra of ZnO evidencing that Mn is mostly incorporated into the ZnO host matrix. Increase of Mn concentration (8-20%) is accompanied by formation of Mn2O3 clusters manifesting itself in the appearance of a corresponding mode in the Raman spectra. These clusters influence dramatically optical and electrical properties of the films. The Mn "solubility limit" for the films growth technique used is determined to be near 8%. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：2140 / 2143

页数：4

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