Effect of Optical Phonon Scattering on the Performance of GaN Transistors

被引：94

作者：

Fang, Tian ^{[1
]}

Wang, Ronghua ^{[1
]}

Xing, Huili ^{[1
]}

Rajan, Siddharth ^{[2
]}

Jena, Debdeep ^{[1
]}

机构：

[1] Univ Notre Dame, Dept Elect Engn, Notre Dame, IN 46556 USA

[2] Ohio State Univ, Dept Elect & Comp Engn, Columbus, OH 43210 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2012年 / 33卷 / 05期

关键词：

f(T); high-electron-mobility transistor (HEMT); optical phonons; saturation current; scattering; transconductance; TEMPERATURE; DENSITY; HEMTS;

D O I：

10.1109/LED.2012.2187169

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A model based on optical phonon scattering is developed to explain peculiarities in the current drive, transconductance, and high-speed behavior of short-gate-length GaN transistors. The model is able to resolve these peculiarities and provides a simple way to explain transistor behavior in any semiconductor material system in which electron-optical-phonon scattering is strong.

引用

页码：709 / 711

页数：3

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