Developer-free direct patterning of PMMA/ZEP 520A by low voltage electron beam lithography

被引：3

作者：

Zheng, David Ai Zhi ^{[1
]}

Mohammad, Mohammad Ali ^{[1
]}

Dew, Steven Kelly ^{[1
]}

Stepanova, Maria ^{[1
,2
]}

机构：

[1] Univ Alberta, Dept Elect & Comp Engn, Edmonton, AB T6G 2V4, Canada

[2] Natl Inst Nanotechnol NRC, Edmonton, AB T6G 2M9, Canada

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2011年 / 29卷 / 06期

基金：

加拿大自然科学与工程研究理事会;

关键词：

D O I：

10.1116/1.3634017

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The authors report an approach that has potential to fabricate dense structures without liquid development. Two kinds of positive tone electron beam resist, 950k PMMA and ZEP 520A (Nippon Zeon), were studied for their properties and behaviors while subjecting them to exposure, thermal development, and reactive ion etching. So far, we have successfully patterned 70 nm half-pitch gratings in both 950k PMMA and ZEP 520A without liquid development. VC 2011 American Vacuum Society. [DOI: 10.1116/1.3634017]

引用

页数：7

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