Numerical simulation of the pseudo-MOSFET characterization technique

被引：12
|
作者：
Munteanu, D
Cristoloveanu, S
Guichard, E
机构：
[1] ENSERG, LPCS, F-38016 Grenoble 1, France
[2] Silvaco Data Syst Sarl, F-38610 Gieres, France
来源：
SOLID-STATE ELECTRONICS | 1999年 / 43卷 / 03期
关键词：
Computer simulation - Semiconducting films - Semiconductor device models - Silicon on insulator technology - Silicon wafers;
D O I：
10.1016/S0038-1101(98)00293-7
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The Psi-MOSFET offers the most appropriate method for detailed electrical characterization of bare silicon on insulator (SOI) wafers. 2-D and 3-D numerical simulations of the Psi-MOSFET are performed in order to validate the basic principles and to uncover several less obvious aspects: evaluation of the geometrical factor, distribution of the current lines: influence of the sample size and borders proximity. The optimal conditions for accurate operation of the Psi-MOSFET are clarified in terms of sample dimensions, probe interdistance, film thickness and contact area. (C) 1999 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：547 / 554
页数：8
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