KF addition to Cu2SnS3 thin films prepared by sulfurization process

被引：8

作者：

Nakashima, Mitsuki ^{[1
]}

Fujimoto, Junya ^{[1
]}

Yamaguchi, Toshiyuki ^{[1
]}

Sasano, Junji ^{[2
]}

Izaki, Masanobu ^{[2
]}

机构：

[1] Wakayama Coll, Nat Inst Technol, Wakayama 6440023, Japan

[2] Toyohashi Univ Technol, Toyohashi, Aichi 4418580, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2017年 / 56卷 / 04期

关键词：

CU(IN; GA)SE-2; SOLAR-CELLS; POSTDEPOSITION TREATMENT; EFFICIENCY ENHANCEMENT; COMPOUND; NA;

D O I：

10.7567/JJAP.56.04CS02

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Cu2SnS3 thin films were fabricated by sulfurization with KF addition and applied to photovoltaic devices. Two methods, two-stage annealing and the use of four-layer precursors, were employed, and the quantity of NaF and KF and the annealing temperature were changed. By electron probe microanalysis (EPMA), the Cu/Sn mole ratio was found to range from 0.81 to 1.51. The X-ray diffraction (XRD) patterns and Raman spectra indicated that the fabricated thin films had a monoclinic Cu2SnS3 structure. The Cu2SnS3 thin films fabricated by two-stage annealing had a close-packed structure and a pinhole-free surface morphology. The best solar cell in this study showed V-oc of 293 mV, which surpassed the previously reported value. (C) 2017 The Japan Society of Applied Physics

引用

页数：4

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