Self-Aligned Coplanar a-IGZO TFTs and Application to High-Speed Circuits

被引:148
|
作者
Kang, Dong Han [1 ,2 ]
Kang, In [1 ,2 ]
Ryu, Sang Hyun [1 ,2 ]
Jang, Jin [1 ,2 ]
机构
[1] Kyung Hee Univ, Dept Informat Display, Seoul 130701, South Korea
[2] Kyung Hee Univ, Adv Display Res Ctr, Seoul 130701, South Korea
关键词
Amorphous indium-gallium-zinc-oxide (a-IGZO); coplanar; ring oscillator (RO); self-aligned process; thin-film transistor (TFT); THIN-FILM TRANSISTORS; GA-ZN-O; RESISTANCE;
D O I
10.1109/LED.2011.2161568
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We report a self-aligned coplanar amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT) using an a-IGZO/SiO2 stack layer. From the channel-length dependence of the total resistance for the TFTs, the channel and parasitic resistances were found to be 8.4 k Omega/mu m and 9.7 k Omega/sq, respectively. The fabricated a-IGZO TFT exhibits field-effect mobility of 23.3 cm(2)/V . s, threshold voltage of 3.6 V, and gate voltage swing of 203 mV/dec. A 23-stage ring oscillatormade of the self-aligned TFTs exhibits a propagation delay time of 17 ns/stage at a supply voltage of 22 V.
引用
收藏
页码:1385 / 1387
页数:3
相关论文
共 50 条
  • [1] High-Speed and Low-Voltage-Driven Shift Register With Self-Aligned Coplanar a-IGZO TFTs
    Geng, Di
    Kang, Dong Han
    Seok, Man Ju
    Mativenga, Mallory
    Jang, Jin
    IEEE ELECTRON DEVICE LETTERS, 2012, 33 (07) : 1012 - 1014
  • [2] Highly stable self-aligned coplanar a-IGZO TFTs under high temperature stress
    Lee, Jiseob
    Lee, Suhui
    Jeong, Duk Young
    Jang, Jin
    2018 9TH INTHERNATIONAL CONFERENCE ON COMPUTER AIDED DESIGN FOR THIN-FILM TRANSISTORS (CAD-TFT), 2018, : 8 - 8
  • [3] Circuits and AMOLED display with self-aligned a-IGZO TFTs on polyimide foil
    Nag, Manoj
    Bhoolokam, Ajay
    Smout, Steve
    Willegems, Myriam
    Muller, Robert
    Myny, Kris
    Schols, Sarah
    Ameys, Marc
    Genoe, Jan
    Tung Huei Ke
    Vicca, Peter
    Ellis, Tim
    Cobb, Brian
    Kumar, Abhishek
    van der Steen, Jan-Laurens P. J.
    Gelinck, Gerwin
    Fukui, Yusuke
    Obata, Koji
    Groeseneken, Guido
    Heremans, Paul
    Steudel, Soeren
    JOURNAL OF THE SOCIETY FOR INFORMATION DISPLAY, 2014, 22 (10) : 509 - 517
  • [4] Channel Length Dependent Bias-Stability of Self-Aligned Coplanar a-IGZO TFTs
    Ha, Su Hwa
    Kang, Dong Han
    Kang, In
    Han, Ji Ung
    Mativenga, Mallory
    Jang, Jin
    JOURNAL OF DISPLAY TECHNOLOGY, 2013, 9 (12): : 985 - 988
  • [5] Effects of Multi-Gates on Performance and Stability of Self-Aligned Coplanar a-IGZO TFTs
    Han, Jiung
    Kang, Donghan
    Jang, Jin
    IDW/AD '12: PROCEEDINGS OF THE INTERNATIONAL DISPLAY WORKSHOPS, PT 1, 2012, 19 : 413 - 416
  • [6] Effect of Oxygen Partial Pressure on the Performance of a-IGZO TFTs with a Self-Aligned Top-Gate Coplanar Structure
    Ryu, Sang Hyun
    Kang, Dong Han
    Park, Youngchul
    Kang, In
    Jang, Jin
    IDW'11: PROCEEDINGS OF THE 18TH INTERNATIONAL DISPLAY WORKSHOPS, VOLS 1-3, 2011, : 599 - 602
  • [7] Implementation of Fully Self-Aligned Homojunction Double-Gate a-IGZO TFTs
    He, Xin
    Wang, Longyan
    Xiao, Xiang
    Deng, Wei
    Zhang, Letao
    Chan, Mansun
    Zhang, Shengdong
    IEEE ELECTRON DEVICE LETTERS, 2014, 35 (09) : 927 - 929
  • [8] High-Speed Pseudo-CMOS Circuits Using Bulk Accumulation a-IGZO TFTs
    Chen, Yuanfeng
    Geng, Di
    Mativenga, Mallory
    Nam, Hyoungsik
    Jang, Jin
    IEEE ELECTRON DEVICE LETTERS, 2015, 36 (02) : 153 - 155
  • [9] High Performance Inverter with a-IGZO-based Resistor Load and Self-Aligned Coplanar a-IGZO Driving TFT
    Geng, Di
    Kang, Dong Han
    Seok, Man Ju
    Mativenga, Mallory
    Jang, Jin
    IDW/AD '12: PROCEEDINGS OF THE INTERNATIONAL DISPLAY WORKSHOPS, PT 2, 2012, 19 : 879 - 881
  • [10] Submicrometer Top-Gate Self-Aligned a-IGZO TFTs by Substrate Conformal Imprint Lithography
    Ram, Mamidala Saketh
    de Kort, Laura
    de Riet, Joris
    Verbeek, Roy
    Bel, Thijs
    Gelinck, Gerwin
    Kronemeijer, Auke Jisk
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2019, 66 (04) : 1778 - 1782