Defect clustering during ion irradiation of GaAs: Insight from molecular dynamics simulations

被引：56

作者：

Nordlund, K

Peltola, J

Nord, J

Keinonen, J

Averback, RS

机构：

[1] Univ Helsinki, Accelerator Lab, FIN-00014 Helsinki, Finland

[2] Univ Illinois, Mat Res Lab, Urbana, IL 61801 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2001年 / 90卷 / 04期

关键词：

D O I：

10.1063/1.1384856

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Defect formation in compound semiconductors such as GaAs under ion irradiation is not as well understood as in Si and Ge. We show how a combination of ion range calculations and molecular dynamics computer simulations can be used to predict the atomic-level damage structures produced by MeV ions. The results show that the majority of damage produced in GaAs both by low-energy self-recoils and 6 MeV He ions is in clusters, and that a clear majority of the isolated defects are interstitials. Implications of the results for suggested applications are also discussed. (C) 2001 American Institute of Physics.

引用

页码：1710 / 1717

页数：8

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