Quasi one-dimensional transport in single GaAs/AlGaAs core-shell nanowires

被引：22

作者：

Lucot, D. ^{[1
]}

Jabeen, F. ^{[1
]}

Harmand, J. -C. ^{[1
]}

Patriarche, G. ^{[1
]}

Giraud, R. ^{[1
]}

Faini, G. ^{[1
]}

Mailly, D. ^{[1
]}

机构：

[1] LPN CNRS, F-91460 Marcoussis, France

来源：

APPLIED PHYSICS LETTERS | 2011年 / 98卷 / 14期

关键词：

LUTTINGER-LIQUID; HETEROSTRUCTURES; TRANSISTORS; NANOTUBES; EPITAXY;

D O I：

10.1063/1.3574026

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present an original approach to fabricate single GaAs/AlGaAs core-shell nanowire with robust and reproducible transport properties. The core-shell structure is buried in an insulating GaAs overlayer and connected as grown in a two-probe setup using the highly doped growth substrate and a top diffused contact. The measured conductance shows a non-Ohmic behavior with temperature and voltage-bias dependences following power laws, as expected for a quasi one-dimensional system. (C) 2011 American Institute of Physics. [doi:10.1063/1.3574026]

引用

页数：3

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