Weak antilocalization and localization in disordered and interacting Weyl semimetals

被引:114
|
作者
Lu, Hai-Zhou [1 ,2 ]
Shen, Shun-Qing [2 ]
机构
[1] South Univ Sci & Technol China, Dept Phys, Shenzhen, Peoples R China
[2] Univ Hong Kong, Dept Phys, Hong Kong, Hong Kong, Peoples R China
关键词
TOPOLOGICAL DIRAC SEMIMETAL; ELECTRON-MOBILITY; MAGNETORESISTANCE; TRANSPORT; TRANSITION; CD3AS2; PHASE;
D O I
10.1103/PhysRevB.92.035203
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Using the Feynman diagram techniques, we derive the finite-temperature conductivity and magnetoconductivity formulas from the quantum interference and electron-electron interaction, for a three-dimensional disordered Weyl semimetal. For a single valley of Weyl fermions, we find that the magnetoconductivity is negative and proportional to the square root of magnetic field at low temperatures, as a result of the weak antilocalization. By including the contributions from the weak antilocalization, Berry curvature correction, and Lorentz force, we compare the calculated magnetoconductivity with a recent experiment. The weak antilocalization always dominates the magnetoconductivity near zero field, thus gives one of the transport signatures for Weyl semimetals. In the presence of strong intervalley scattering and correlations, we expect a crossover from the weak antilocalization to weak localization. In addition, we find that the interplay of electron-electron interaction and disorder scattering always dominates the conductivity at low temperatures and leads to a tendency to localization. Finally, we present a systematic comparison of the transport properties of single-valley Weyl fermions, 2D massless Dirac fermions, and 3D conventional electrons.
引用
收藏
页数:13
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