The Gate Hysteresis in Single Electron Transport Driven by Surface Acoustic Wave (SAW/SET) Devices

We study the gate hysteresis behavior in single electron transport driven by surface acoustic wave (SAW/SET) devices over a wide temperature range from 1.7 to 200 K. From the temperature dependence, we come to the conclusion that the gate hysteresis in SAW/SET devices arises from a combination of the screening effect of the surface state and the electron tunneling between the moving quantum dot and the impurity quantum dot. In addition, when a perpendicular magnetic field is applied to the sample, the behavior of the gate hysteresis changes substantially. A competition between the magnetic field and the gate voltage on determining the electronic wave function is considered as the reason for the experimental results.