Effect of mask pattern fidelity on 193 nm lithography performance

被引：1

作者：

Cheng, CC ^{[1
]}

Su, TL ^{[1
]}

Tsai, FG ^{[1
]}

Tsai, TS ^{[1
]}

Tu, CC ^{[1
]}

Yoo, CS ^{[1
]}

机构：

[1] Taiwan Semicond Mfg Co Ltd, E Beam Operat Div, Hsinchu 300, Taiwan

来源：

23RD ANNUAL BACUS SYMPOSIUM ON PHOTOMASK TECHNOLOGY, PTS 1 AND 2 | 2003年 / 5256卷

关键词：

PSKOPC; pattern fidelity; corner rounding;

D O I：

10.1117/12.517829

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

As device technology shrinks beyond 0.13um, extensive resolution enhancement techniques such as PSM and OPC are employed in an attempt to gain usable photo process windows. Pattern fidelity on a mask measured in terms of corner rounding and line end shortening significantly influences the expected wafer performance. In this work, we report the effects of mask making parameters on the mask pattern fidelity and the resulting wafer pattern fidelity.

引用

页码：937 / 944

页数：8

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