Study of charge transport in non-irradiated and irradiated silicon detectors

The electrical characteristics of non-irradiated and irradiated n-type silicon detectors (p(+)-n-n(+) diode) are extracted by fitting a charge transport model to a set of experimental data obtained from the measurement of the current pulse response induced by alpha and beta particles in non-irradiated and irradiated silicon detectors. The detectors have been irradiated either with approximate to 1 MeV neutrons up to a fluence of 11.2 x 10(13) n/cm(2) or with 24 GeV/c protons up to a fluence of 10.6 x 10(13) p/cm(2). After n to p-type inversion, a small junction on the p(+) side of the detector is introduced to fit the experimental data and therefore to account for the evolution of the electrical characteristics of the detectors with fluence, (C) 1999 Elsevier Science B.V. All rights reserved.