High-precision neuron MOSFET structures

被引：0

作者：

Rantala, A

Franssila, S

Kaski, K

Lampinen, J

Åberg, M

Kuivalainen, P

机构：

[1] VTT Elect, FIN-02044 VTT, Finland

[2] Helsinki Univ Technol, Lab Computat Engn, FIN-02015 Hut, Finland

[3] Helsinki Univ Technol, Electron Phys Lab, FIN-02150 Espoo, Finland

来源：

ELECTRONICS LETTERS | 1999年 / 35卷 / 02期

关键词：

D O I：

10.1049/el:19990110

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Improved structures for neuron MOSFETs, which can execute a weighted summation of multiple input signals, are proposed and tested. Both an additional polysilicon shield and a substrate biasing show good control of the turning point of the neuron MOSFET inverters fabricated using a double poly-CMOS technology. The improved accuracy is demonstrated by fabricating A/D converter circuits utilising the neuron MOSFETs.

引用

页码：155 / 157

页数：3

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