Separating NBTI and PBTI effects on the Degradation of Ring Oscillator Frequency

被引：0

作者：

Linder, Barry P. ^{[1
]}

Kim, Jae-Joon ^{[1
]}

Rao, Rahul ^{[1
]}

Jenkins, Keith ^{[1
]}

Bansal, Aditya ^{[1
]}

机构：

[1] IBM TJ Watson Res Ctr, Yorktown Hts, NY 10706 USA

来源：

2011 IEEE INTERNATIONAL INTEGRATED RELIABILITY WORKSHOP FINAL REPORT (IRW) | 2011年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Ring Oscillators (RO) have traditionally been utilized to assess the effect NBTI transistor degradation on operating frequency. RO stress results are difficult to interpret for technologies with metal gates and high-k dielectrics, since the circuit degrades from both NBTI in PFETs and PBTI in NFETs. We have successfully designed and tested specialized circuits that separate the contribution of each BTI mechanism on RO frequency degradation. Because of their simplicity, these structures are suitable for early learning in the development cycle.

引用

页码：1 / 6

页数：6

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