Surface modification and the switching processes in ferroelectric liquid crystals

被引:3
|
作者
Ulrich, DC [1 ]
Cherrill, MJ [1 ]
Elston, SJ [1 ]
机构
[1] UNIV OXFORD,DEPT ENGN SCI,OXFORD OX1 3PJ,ENGLAND
基金
美国国家科学基金会;
关键词
D O I
10.1080/026782997207722
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
This work relates to the control of switching in ferroelectric liquid crystal devices. By considering the various parameters which influence the switching process a method of engineering both the location and threshold of domain nucleation sites has been developed. We have found that deliberate modification of the surface morphology has a profound influence on the domain switching process. This paper discusses the experimental cell construction and switching results.
引用
收藏
页码:797 / 802
页数:6
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