Design and optimization of vertical surrounding gate MOSFETs for enhanced transconductance-to-current ratio (gm/Ids)

被引：10
|
作者：
Kranti, A
Rashmi
Haldar, S
Gupta, RS
机构：
[1] Univ Delhi, Dept Elect Sci, Semicond Device Res Lab, New Delhi 110021, India
[2] Univ Delhi, Motilal Nehru Coll, Dept Phys, New Delhi 110021, India
来源：
SOLID-STATE ELECTRONICS | 2003年 / 47卷 / 01期
关键词：
vertical surrounding gate (VSG) MOSFET; double gate (DG) MOSFET; transconductance-to-current ratio; transconductance generation efficiency; short channel effects;
D O I：
10.1016/S0038-1101(02)00320-9
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The present analysis proposes a new technique to optimize the device parameters for improving the transconductance-to-current ratio of vertical surrounding gate (VSG) and double gate (DG) MOSFETs. Advantages of VSG MOSFETs over DG MOSFETs in terms of transconductance-to-current ratio (g(m)/I-ds) are examined in detail. Model shows new opportunities for realizing future ULSI circuits with VSG MOSFETs. Close proximity with published results confirms the validity of the present model. (C) 2002 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：155 / 159
页数：5
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