Atomic structure of MBE-Grown GaAs nanowhiskers

被引：72
|
作者：
Soshnikov, IP [1 ]
Cirlin, GÉ
Tonkikh, AA
Samsonenko, YB
Dubovskii, VG
Ustinov, VM
Gorbenko, OM
Litvinov, D
Gerthsen, D
机构：
[1] Russian Acad Sci, St Petersburg Physicotech Sci & Educ Ctr, St Petersburg 195220, Russia
[2] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia
[3] Russian Acad Sci, Inst Analyt Instrument Mkt, St Petersburg 198103, Russia
[4] Univ Karlsruhe, D-76128 Karlsruhe, Germany
来源：
PHYSICS OF THE SOLID STATE | 2005年 / 47卷 / 12期
基金：
俄罗斯基础研究基金会;
关键词：
D O I：
10.1134/1.2142881
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The structural properties of MBE-grown GaAs and Al0.3Ga0.7As nanowhiskers were studied. The formation of wurtzite and 4H-polytype hexagonal structures with characteristic sizes of 100 nm or larger in these materials was demonstrated. It is concluded that the Au-Ga activation alloy symmetry influences the formation of the hexagonal structure. (c) 2005 Pleiades Publishing, Inc.
引用
收藏
页码：2213 / 2218
页数：6
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