AlGaN/GaN Based Ultra-wideband 15-W High-Power Amplifier with Improved Return Loss

被引:9
|
作者
Jeong, Jin-Cheol [1 ]
Jang, Dong-Pil [1 ]
Shin, Dong-Hwan [1 ]
Yom, In-Bok [1 ]
Kim, Jae-Duk [2 ]
Lee, Wang-Youg [2 ]
Lee, Chang-Hoon [3 ]
机构
[1] ETRI, Broadcasting Media Res Lab, Daejeon, South Korea
[2] LIGNEX1, EW R&D Lab, Yongin, South Korea
[3] Agcy Def Dev, R&D Inst 2, Daejeon, South Korea
关键词
Gallium nitride (GaN); microwave monolithic integrated circuit (MMIC); high power amplifier (HPA); wideband; return loss; electronic warfare (EW);
D O I
10.4218/etrij.16.2615.0020
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
An ultra-wideband microwave monolithic integrated circuit high-power amplifier with excellent input and output return losses for phased array jammer applications was designed and fabricated using commercial 0.25-mu m AlGaN/GaN technology. To improve the wideband performance, resistive matching and a shunt feedback circuit are employed. The input and output return losses were improved through a balanced design using Lange-couplers. This three-stage amplifier can achieve an average saturated output power of 15 W, and power added efficiency of 10% to 28%, in a continuous wave operation over a frequency range of 6 GHz to 18 GHz. The input and output return losses were demonstrated to be lower than -15 dB over a wide frequency range.
引用
收藏
页码:972 / 980
页数:9
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