Dark Count Rate Modeling in Single-Photon Avalanche Diodes for Space LIDAR Applications

被引：4

作者：

Panglosse, Aymeric ^{[1
,2
]}

Martin-Gonthier, Philippe ^{[1
]}

Marcelot, Olivier ^{[1
]}

Virmontois, Cedric ^{[2
]}

Saint-Pe, Olivier ^{[3
]}

Magnan, Pierre ^{[1
]}

机构：

[1] Univ Toulouse, ISAE SUPAERO, F-31055 Toulouse, France

[2] Ctr Natl Etud Spatiales CNES, F-31055 Toulouse, France

[3] Airbus Def & Space, ZI Palais, 31 Rue Cosmonautes, F-31400 Toulouse, France

来源：

2019 17TH IEEE INTERNATIONAL NEW CIRCUITS AND SYSTEMS CONFERENCE (NEWCAS) | 2019年

关键词：

Single Photon Avalanche Diode (SPAD); Complementary Metal-Oxide Semiconductor (CMOS); Modeling and simulations; Dark Count Rate (DCR); Technology CAD (TCAD); Matlab;

D O I：

10.1109/newcas44328.2019.8961280

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we present a model to simulate accurately the Dark Count Rate (DCR) for Single-Photon Avalanche Diodes (SPAD) in Complementary Metal-Oxide Semiconductor (CMOS) technology. The model development has been driven by the necessity to comply with the specifications of SPAD used for future space LIDAR applications. To evaluate the DCR, the model is based on a combination of measurements to acquire data related to trap population, Technology CAD (TCAD) simulations and a Matlab routine.

引用

页数：4

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