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Room Temperature Electrical Manipulation of Giant Magnetoresistance in Spin Valves Exchange-Biased with BiFeO3
被引:147
|作者:
Allibe, Julie
[1
,2
]
Fusil, Stephane
[1
,2
,3
]
Bouzehouane, Karim
[1
,2
]
Daumont, Christophe
[1
,2
]
Sando, Daniel
[1
,2
]
Jacquet, Eric
[1
,2
]
Deranlot, Cyrille
[1
,2
]
Bibes, Manuel
[1
,2
]
Barthelemy, Agnes
[1
,2
]
机构:
[1] Unite Mixte Phys CNRS Thales, F-91767 Palaiseau, France
[2] Univ Paris 11, F-91405 Orsay, France
[3] Univ Evry Val dEssonne, F-91025 Evry, France
关键词:
Spintronics;
multiferroic;
magnetoelectric;
nanodomains;
BiFeO3;
spin valve;
FILMS;
D O I:
10.1021/nl202537y
中图分类号:
O6 [化学];
学科分类号:
0703 ;
摘要:
Magnetoelectric multiferroics are attractive materials for the development of low-power electrically controlled spintronic devices. Here we report the optimization of the exchange bias as well as the giant magnetoresistance effect (GMR) of spin valves deposited on top of BiFeO3-based heterostnictures. We show that the exchange bias can be electrically controlled through a change in the relative proportion of 109 degrees domain walls and propose solutions toward a reversible process.
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页码:1141 / 1145
页数:5
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