High-performance focal plane array based on InAs-GaSb superlattices, with a 10-μm cutoff wavelength

被引：35

作者：

Delaunay, Pieffe-Yves ^{[1
]}

Nguyen, Binh Minh ^{[1
]}

Hoffman, Darin ^{[1
]}

Razeghi, Manijeh ^{[1
]}

机构：

[1] Northwestern Univ, Ctr Quantum Devices, Evanston, IL 60611 USA

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 2008年 / 44卷 / 5-6期

关键词：

focal plane array; infrared; photodetectors; Type-II superlattice;

D O I：

10.1109/JQE.2008.916701

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on the demonstration of a focal plane array based on Type-II InAs-GaSb superlattices grown on n-type GaSb substrate with a 50% cutoff wavelength at 10 mu m. The surface leakage occurring after flip-chip bonding and underfill in the Type-II devices was suppressed using a double heterost ructure design. The R(0)A of diodes passivated with SiO2 was 23 Omega . cm(2) after underfill. A focal plane array hybridized to an Indigo readout integrated circuit demonstrated a noise equivalent temperature difference of 33 mK at 81 K, with an integration time of 0.23 ms.

引用

页码：462 / 467

页数：6

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