High-efficiency and high-contrast phosphorescent top-emitting organic light-emitting devices with p-type Si anodes

被引：26
|
作者：
Chen, S. M. [1 ]
Yuan, Y. B. [1 ]
Lian, J. R. [1 ]
Zhou, X. [1 ]
机构：
[1] Sun Yat Sen Univ, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Peoples R China
来源：
OPTICS EXPRESS | 2007年 / 15卷 / 22期
关键词：
D O I：
10.1364/OE.15.014644
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
We report high-efficiency and high-contrast phosphorescent top-emitting organic light-emitting devices (OLEDs) by employing the low reflectance p-type Si bottom anodes and the high transmittance Cs2CO3/Ag top cathodes for effective hole and electron injection. With the green electrophosphorescent material fac tris (2-phenylpyridine) iridium [Ir(ppy)(3)] doped emitting layer, the devices exhibit peak external quantum and power efficiencies of 3.5% (12 cd/A) and 4.5 1m/W, which are the highest values reported for OLEDs using Si wafers as electrodes. Moreover, these devices exhibit significantly higher contrast compared to the conventional bottom-emitting and top-emitting OLEDs with the highly reflective back electrodes. (C) 2007 Optical Society of America.
引用
收藏
页码：14644 / 14649
页数：6
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