How many gates do we need in a transistor?

被引:12
|
作者
Cristoloveanu, Sorin [1 ]
机构
[1] INP Grenoble, CNRS INPG UJF, UMR 5531, Inst Micorelect Electromagnetism & Photon, F-38016 Grenoble 1, France
关键词
SOI; MOSFET; coupling effects; multiple gates; volume inversion;
D O I
10.1109/SMICND.2007.4519636
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The migration from single-gate to multiple-gate SOI transistors is inexorable but still includes a number of hesitations and dilemmas. In this context, we review the main motivations, technological achievements, physics-related implications and future challenges. Specific aspects governing the operation of multiple-gate transistors are discussed with the aim of clarifying the strategic trends. The physics mechanisms are briefly evoked. The road is difficult with many turns; hopefully, it looks long enough. Generic milestones are: nano-size, multiple-gates, innovative ideas and multi-facet SOI technology.
引用
收藏
页码:3 / 10
页数:8
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