A 206-294GHz 3-stage Amplifier in 35nm InP mHEMT, Using a Thin-film Microstrip Environment

被引：0

作者：

Griffith, Zach ^{[1
]}

Ha, Wonill ^{[1
]}

Chen, Peter ^{[1
]}

Kim, Dae-Hyun ^{[1
]}

Brar, Bobby ^{[1
]}

机构：

[1] Teledyne Sci Co, Thousand Oaks, CA 91360 USA

来源：

2010 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST (MTT) | 2010年

关键词：

InP metamorphic high electron mobility transistor (InP mHEMT); E-mode transistor; millimeter Wave; MMIC; low-loss dielectric layer; multiple interconnect layers; thin-film microstrip;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present a compact, 3-stage millimeter-wave monolithic integrated circuit (MMIC) amplifier with an operating frequency of 206-294 GHz, formed by common-source configured 35 nm L-g InP mHEMTs and a multilayer thin-film microstrip (TFM) wiring environment. The amplifier S-21 mid-band gain is 11-16 dB, 3 dB bandwidth at 294 GHz, and 82.5 mW P-DC. This is the first reported InP HEMT MMIC operating in G-, H-band employing thinfilm microstrip. Because the TFM ground-plane shields the signal interconnects from the substrate, well behaved device (0.1-67, 140-200,210-310 GHz) and amplifier (206-320 GHz) measurements are presented from an unthinned, 25 mil substrate. The total size of this 3-stage amplifier is only 0.77x0.40 mm(2).

引用

页码：57 / 60

页数：4

共 2 条

[1] Implementation of Slow-Wave Thin-Film Microstrip Transmission Lines in a 35nm InGaAs Technology
Gatzastras, Athanasios
Massler, Hermann
Leuther, Arnulf
Chartier, Sebastien
Kallfass, Ingmar
2021 16TH EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC 2021), 2021, : 121 - 124
[2] 1.55mW 2GHz ERBW 7b 800MS/s 3-stage Pipelined SAR ADC in 28nm CMOS using a Kickback-Cancelling 7T-Dynamic Residue Amplifier with only 16fF Input Capacitance
Kim, Hyeonsik
Kim, Seonkyung
Kim, Jintae
IEEE ASIAN SOLID-STATE CIRCUITS CONFERENCE (A-SSCC 2021), 2021,

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