Diameter-dependent composition of vapor-liquid-solid grown Si1-xGex nanowires

被引：52
|
作者：
Zhang, Xi [1 ]
Lew, Kok-Keong [1 ]
Nimmatoori, Pramod [1 ]
Redwing, Joan M. [1 ]
Dickey, Elizabeth C. [1 ]
机构：
[1] Penn State Univ, Mat Res Inst, Dept Mat Sci & Engn, University Pk, PA 16802 USA
来源：
NANO LETTERS | 2007年 / 7卷 / 10期
关键词：
D O I：
10.1021/nl071132u
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
Diameter-dependent compositions of Si-1-Ge-x(x) nanowires grown by a vapor-liquid-solid mechanism using SiH4 and GeH4 precursors are studied by transmission electron microscopy and X-ray energy dispersive spectroscopy. For the growth conditions studied, the Ge concentration in Si-1-Ge-x(x) nanowires shows a strong dependence on nanowire diameter, with the Ge concentration decreasing with decreasing nanowire diameter below similar to 50 nm. The size-dependent nature of Ge concentration in Si-1-Ge-x(x) NWs is strongly suggestive of Gibbs-Thomson effects and highlights another important phenomenon in nanowire growth.
引用
收藏
页码：3241 / 3245
页数：5
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