Multi-step process control and characterization of scanning probe lithography

An atomic force microscope with a conducting tip (CT-AFM) was used to fabricate and characterize nanometer scale Lines of (1) silicon oxide and (2) silicon nitride on II-terminated n-type silicon (100) wafers. In process (1), a negative bias was applied to the tip of the CT-AFM system and the resulting electric field caused electrolysis of ambient water vapor and local oxidation of the silicon surface. In addition, the accompanying current was detected by a sub-pA current amplifier. In process (2), the presence of a nitrogen atmosphere containing a small partial pressure of ammonia resulted in the local nitridation of the surface. The CT-AFM system was also used to locate and study the dielectric properties of the silicon-oxide lines as well as copper islands buried under 20 nm of silicon dioxide. A computer-controlled feedback system and raster scanning of the sample produced simultaneous topographic and Fowler-Nordheim tunneling maps of the structures under study. Detailed aspects of nanolithography and local-probe Fowler-Nordheim characterization using a CT-AFM will be discussed.