Contact Area Design of Ohmic RF MEMS Switch for Enhanced Power Handling

被引：0
|
作者：
Anuroop [1 ,2 ]
Bansal, Deepak [1 ,2 ]
Khushbu [1 ]
Kumar, Prem [1 ]
Kumar, Amit [1 ,2 ]
Rangra, Kmaljit [1 ,2 ]
机构：
[1] CSIR Cent Elect Engn Res Inst, Transducers & Actuators Grp, Pilani, Rajasthan, India
[2] Acad Sci & Innovat Res, CEERI Campus, Pilani, Rajasthan, India
来源：
2018 12TH INTERNATIONAL CONFERENCE ON SENSING TECHNOLOGY (ICST) | 2018年
关键词：
Ohmic Switch; Power Handling; RF MEMS; ANTI-STICTION COATINGS; METALLIZATION; RELIABILITY; PERFORMANCE; PHYSICS;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
RF MEMS switches are small in size, consume low power and have good RF response. However, the field deployment of RF MEMS switches is restricted due to limited power handling capability and reliability issues. In literature, power handling is improved through contact area either by adding hard materials or increasing the thickness. In the present paper, calculations for contact area versus stiction forces are performed and RF MEMS ohmic switch with optimal contact area is proposed and fabricated. The power handling of RF MEMS switch is increased by 55.86% without the addition of new material or processing steps. Insertion loss and return loss of the switch are also improved using corner compensation.
引用
收藏
页码：91 / 95
页数：5
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