Trapping dependent H+ motion in SIMOX buried oxides

被引：0
|
作者：
Macfarlane, PJ [1 ]
Stahlbush, RE [1 ]
机构：
[1] USN, Res Lab, Washington, DC 20375 USA
来源：
MICROELECTRONIC ENGINEERING | 2001年 / 59卷 / 1-4期
关键词：
hydrogen transport; hydrogen trapping; SOI; Si/SiO2; interfaces;
D O I：
10.1016/S0167-9317(01)00665-7
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The transport characteristics of mobile H+ ions are examined in SIMOX buried oxides. The H+ ions are created in the buried oxides by annealing in H-2 gas. The effects of applied oxide field and H+ concentration are investigated in order to develop a model for the mechanism of the H+ motion. Results suggest the H+ motion across the oxide is limited by the detrapping of the mobile charges from defects located near the top Si/SiO2 and substrate Si/SiO2 interfaces. Comparisons of the samples annealed under differing conditions indicate that the H+ trapping defects are created and/or modified during the hydrogenation. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：503 / 508
页数：6
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