Critical layer thickness study in In0.75Ga0.25As/In0.5Al0.5As pseudomorphic resonant tunneling diode structure grown on GaAs substrates

被引：1

作者：

Gozu, S ^{[1
]}

Kita, T ^{[1
]}

Kikutani, T ^{[1
]}

Yamada, S ^{[1
]}

机构：

[1] JAIST Hokuriku, Sch Mat Sci, Tatsunokuchi, Ishikawa 9231292, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2001年 / 227卷

关键词：

low dimensional structure; molecular beam epitaxy; arsenates; semiconducting III-V materials; heterojunction semiconductor devices;

D O I：

10.1016/S0022-0248(01)00656-X

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We have studied critical layer thickness (CLT) in an In0.75Ga0.25As resonant tunneling diode structure grown on a GaAs substrate, ia an InAlAs step-graded buffer (SGB) with two types of inverse step(IS)-SGB. We have observed red or blue shift in photoluminescence spectra and CLT change depending on SGB condition. This change reflects from the difference of residual strain InAlAs SGBs adopted here.,(C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：161 / 166

页数：6

共 7 条

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[6] Larger critical thickness determined by photoluminescence measurements in pseudomorphic In0.25Ga0.75As/Al0.32Ga0.68As quantum well grown on (411)A GaAs substrates by molecular beam epitaxy
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