Enhanced thermoelectric properties of β-Cu2Se by incorporating CuGaSe2

被引:24
|
作者
Liu, S.
Gong, Z. N.
Huang, M. J.
Ao, W. Q.
Li, Y.
Li, J. Q. [1 ]
机构
[1] Shenzhen Univ, Coll Mat Sci & Engn, Shenzhen 518060, Peoples R China
基金
中国国家自然科学基金;
关键词
Semiconductors; X-ray diffraction; Electronic transport; THERMAL-CONDUCTIVITY; COPPER SELENIDE; HIGH-FIGURE; PERFORMANCE; MERIT; BI2TE3;
D O I
10.1016/j.jallcom.2016.07.218
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
(Cu2Se)(1-x)(CuGaSe2)(x) alloys with x = 0, 0.005, 0.0075, 0.01, 0.015, 0.025 and 0.03 were prepared by melting and ball milling, followed by spark plasma sintering. The X-ray powder diffraction analysis results indicated that there was a very low amount of CuGaSe2 in a solid solution of crystalline beta-Cu2Se. However, a small amount of dissolved Ga atoms significantly decreased the electrical resistivity and thermal conductivity and drastically decreased the lattice thermal conductivity of b-Cu2Se, thereby improving the power factor and the figure of merit of the system. When the second phase of CuGaSe2 was present, its high electrical resistivity and thermal conductivity had an opposing effect, which lowered the thermoelectric performance of the system. A high figure of merit (zT) of 1.4 was obtained for the (Cu2Se)(0.9925)(CuGaSe2)(0.0075) samples at 823 K. (C) 2016 Elsevier B.V. All rights reserved.
引用
收藏
页码:521 / 526
页数:6
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