Temperature-dependent measurement of Auger recombination in self-organized In0.4Ga0.6As/GaAs quantum dots

被引：67
|
作者：
Ghosh, S [1 ]
Bhattacharya, P
Stoner, E
Singh, J
Jiang, H
Nuttinck, S
Laskar, J
机构：
[1] Univ Michigan, Dept Elect Engn & Comp Sci, Solid State Elect Lab, Ann Arbor, MI 48109 USA
[2] Broadcom Corp, Irvine, CA 92619 USA
[3] Georgia Inst Technol, Dept Elect Engn, Ctr Microelect Res, Atlanta, GA 30332 USA
来源：
APPLIED PHYSICS LETTERS | 2001年 / 79卷 / 06期
关键词：
D O I：
10.1063/1.1391401
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report experimental studies of temperature-dependent Auger recombination coefficients in self-assembled quantum dots. The results are based on a study of temperature-dependent large signal modulation experiments made on self-organized In0.4Ga0.6As/GaAs quantum dot lasers. The Auger coefficient decreases from similar to 8x10(-29) cm(6)/s at 100 K to similar to 4x10(-29) cm(6)/s at 300 K. This behavior, which is different from results in other higher-dimensional systems, is explained in terms of the temperature dependence of electron-hole scattering in the dots and contribution from higher lying states in the dot and adjoining layers. (C) 2001 American Institute of Physics.
引用
收藏
页码：722 / 724
页数：3
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