Second generation current conveyors with enhanced input resistance

被引：1
|
作者：
Alami, M
Fabre, A
Bouhdada, A
机构：
[1] Fac Sci Ainchok, Lab Phys Mat & Microelect, Casablanca, Morocco
[2] Univ Bordeaux 1, Lab Microelect IXL, CNRS,UMR 5818, Telecom Circuits & Syst TCS Grp, F-33405 Talence, France
来源：
INTERNATIONAL JOURNAL OF ELECTRONICS | 1999年 / 86卷 / 04期
关键词：
D O I：
10.1080/002072199133328
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The design of wideband second generation current conveyors implemented from bipolar transistors is reconsidered in order to increase the value of their input resistance, R-Y, at Y. This has been obtained by adding two supplementary transistors only. SPICE simulation results are given. They indicate that this improvement is obtained without damage to the other dynamic characteristics. The increase of R-Y is also confirmed through measurements.
引用
收藏
页码：405 / 412
页数：8
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