Aqueous solution deposition of amorphous gallium tin oxide for thin-film transistors applications

Amorphous gallium fin oxide (GTO) thin films were prepared by a facile, and eco-friendly, aqueous solution process and their applications in thin-film transistors (TFTs) were investigated. The success of the aqueous route was realized by introducing fin fluoride (SnF2) instead of the traditional fin chloride (SnCl2) solute. The roles of adding Ga on the GTO's microstructural, optical, chemical, and electrical performance were comprehensively studied. It was found that Ga can frustrate the crystallization while it augments the optical bandgap (E-g) value of pristine SnO2. More importantly, using Ga could effectively inhibit the formation of oxygen vacancies, thus greatly improving the electrical performance of the GTO TFTs. The amorphous GTO TFTs with a Ga content of 45% exhibited optimum performance, with a saturation mobility (mu(sat)) of 4.26 cm(2)/V s, an on/off current ratio (I-on/I-off ) > 10(7) , and a decent bias stress durability.