Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set

被引:45700
|
作者
Kresse, G
Furthmuller, J
机构
[1] VIENNA TECH UNIV, INST THEORET PHYS, A-1040 VIENNA, AUSTRIA
[2] UNIV JENA, INST FESTKORPERTHEORIE & THEORET OPT, D-07743 JENA, GERMANY
关键词
D O I
10.1016/0927-0256(96)00008-0
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We present a detailed description and comparison of algorithms for performing ab-initio quantum-mechanical calculations using pseudopotentials and a plane-wave basis set. We will discuss: (a) partial occupancies within the framework of the linear tetrahedron method and the finite temperature density-functional theory, (b) iterative methods for the diagonalization of the Kohn-Sham Hamiltonian and a discussion of an efficient iterative method based on the ideas of Pulay's residual minimization, which is close to an order N-atoms(2) scaling even for relatively large systems, (c) efficient Broyden-like and Pulay-like mixing methods for the charge density including a new special 'preconditioning' optimized for a plane-wave basis set, (d) conjugate gradient methods for minimizing the electronic free energy with respect to all degrees of freedom simultaneously. We have implemented these algorithms within a powerful package called VAMP (Vienna ab-initio molecular-dynamics package), The program and the techniques have been used successfully for a large number of different systems (liquid and amorphous semiconductors, liquid simple and transition metals, metallic and semi-conducting surfaces, phonons in simple metals, transition metals and semiconductors) and turned out to be very reliable.
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页码:15 / 50
页数:36
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