Tin whisker growth induced by high electron current density

被引：1
|
作者：
Lin, Y. W. [1 ]
Kao, C. Robert [1 ]
机构：
[1] Natl Taiwan Univ, Dept Mat Sci & Engn, Taipei 10764, Taiwan
来源：
2007 INTERNATIONAL MICROSYSTEMS, PACKAGING, ASSEMBLY AND CIRCUITS TECHNOLOGY CONFERENCE, PROCEEDINGS OF TECHNICAL PAPERS | 2007年
关键词：
D O I：
10.1109/IMPACT.2007.4433568
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The effect of electric current on the tin whisker growth on Sri stripes was studied. The Sri stripes, one mu m in thickness, were patterned on silicon wafers. The design of the Sri stripes allowed for the simultaneous study of the effect of current crowding and current density. It was found that the stress induced by the electric current caused the formation of many Sri whiskers. A higher current density caused more Sn whiskers to form. Of the three temperatures studied, 50 degrees C was the most favorable one for the formation of the Sri whiskers. In addition, the current crowding effect also influenced the whisker growth.
引用
收藏
页码：62 / 65
页数：4
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