Improvement in IGZO-based thin film transistor performance using a dual-channel structure and electron-beam-irradiation

被引：4

作者：

Yoon, Young Joon ^{[1
]}

Kim, Bong Ho ^{[1
]}

Gu, Hyun Ho ^{[1
]}

机构：

[1] Korea Inst Ceram Engn & Technol, Nanoconvergence Mat Ctr, 101 Soho Ro, Jinju Si 52851, Gyeongsangam Do, South Korea

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2019年 / 34卷 / 02期

关键词：

IGZO; TFT; dual-channel; sputtering; electron-beam-irradiation; AMORPHOUS OXIDE SEMICONDUCTORS; LOW-TEMPERATURE; LAYER; SURFACE;

D O I：

10.1088/1361-6641/aafa0c

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We investigated the effects of electron-beam-irradiation (EBI) on amorphous indium gallium zinc oxide (IGZO) films deposited by RF magnetron sputtering. The device performance of thin film transistors (TFTs) fabricated from these films was also evaluated. We conducted transmission electron microscopy and x-ray photoelectron spectroscopy to analyze the microstructure and chemical state of the synthesized IGZO. The EBI-treated IGZO TFTs achieved higher carrier mobility and on/off ratio than conventionally annealed IGZO TFTs. In addition, we found that a dual-channel structure shows electrical characteristics superior to those of a single-channel structure, with a carrier mobility of 18.1 cm(2) /V . s.

引用

页数：8

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