Photocurrent Spectroscopy of Single Wurtzite GaAs Nanowires

被引：3

作者：

Kim, D. C. ^{[1
]}

Ahtapodov, L. ^{[1
]}

Boe, A. B. ^{[1
]}

Choi, J. W. ^{[2
]}

Ji, H. ^{[2
]}

Kim, G. T. ^{[2
]}

Moses, A. F. ^{[1
]}

Dheeraj, D. L. ^{[1
]}

Fimland, B. O. ^{[1
]}

Weman, H. ^{[1
]}

机构：

[1] Norwegian Univ Sci & Technol, Dept Elect & Telecommun, NO-7491 Trondheim, Norway

[2] Korea Univ, Sch Elect Engn, Seoul 136701, South Korea

来源：

PHYSICS OF SEMICONDUCTORS: 30TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS | 2011年 / 1399卷

关键词：

Photocurrent; GaAs; nanowire; wurtzite; GAN-NANOWIRES;

D O I：

10.1063/1.3666437

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Photocurrent of single wurtzite GaAs nanowires grown by Au-assisted molecular beam epitaxy is measured at room and low temperature (10 K). At room temperature a high photo-response with more than two orders of magnitude increase of current is observed. The wavelength dependence of the photocurrent shows a sharp change near the zinc blende GaAs band gap. The absence of the free exciton peak in the low temperature photocurrent spectrum, and problems related to determining the exact position of the energy bandgap of wurtzite GaAs from the observed data are discussed.

引用

页数：2

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