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Improvement of the transfer current modeling in HICUM/L0

被引：2
|
作者：
Thiele, C. [1 ]
Berkner, J. [1 ]
Klein, W. [1 ]
机构：
[1] Infineon Technol AG, D-85579 Neubiberg, Germany
来源：
PROCEEDINGS OF THE 2007 IEEE BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING (BCTM) | 2007年
关键词：
bipolar transistors; semiconductor device modeling; circuit simulation;
D O I：
10.1109/BIPOL.2007.4351840
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
HICUM/L0 is a bipolar compact model which was developed to combine the advantage of the sophisticated HICUM/L2 and the simplicity of the well-known SGP-Model. In this paper improved model equations for the description of the forward transfer current in the HICUM/L0 model are presented. The improved model equations avoid a negative slope which can occur in the simulated collector current, but they do not need additional model parameters.
引用
收藏
页码：62 / 65
页数：4
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