Intermixing induced changes in the radiative emission from III-V quantum dots

被引：58
|
作者：
Lobo, C [1 ]
Leon, R
Fafard, S
Piva, PG
机构：
[1] Australian Natl Univ, Dept Elect Mat Engn, Res Sch Phys Sci & Engn, Canberra, ACT 0200, Australia
[2] Natl Res Council Canada, Inst Microstruct Sci, Ottawa, ON K1A 0R6, Canada
来源：
APPLIED PHYSICS LETTERS | 1998年 / 72卷 / 22期
关键词：
D O I：
10.1063/1.121478
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have examined the effect of thermally induced interdiffusion on the luminescence emission from red and infrared emitting self-assembled III-V quantum dots. Three different combinations of dot/barrier materials have been investigated: InAlAs/AlGaAs, InGaAs/AlGaAs and InGaAs/GaAs. In all cases, thermal intermixing was found to result in significant blueshifts of the photoluminescence (PL) emission. in addition, narrowing of the linewidth of the inhomogeneously broadened PL peak was observed, Both effects were found to be strongly dependent on the material system and average dot size. InAlAs/AlGaAs quantum dots exhibited the greatest linewidth reduction after intermixing, indicating this to be a promising method of achieving narrower luminescence lines for devices such as red-emitting zero-dimensional lasers. (C) 1998 American Institute of Physics.
引用
收藏
页码：2850 / 2852
页数：3
相关论文
共 50 条
  • [1] Effect of III-V on insulator structure on quantum well intermixing
    Takashima, Seiya
    Ikku, Yuki
    Takenaka, Mitsuru
    Takagi, Shinichi
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2016, 55 (04)
  • [2] Colloidal quantum dots of III-V semiconductors
    Nozik, AJ
    Micic, OI
    MRS BULLETIN, 1998, 23 (02) : 24 - 30
  • [3] Fabrication of III-V semiconductor quantum dots
    Akahane, Kouichi
    Yamamoto, Naokatsu
    PLASMONICS: NANOIMAGING, NANOFABRICATION, AND THEIR APPLICATIONS V, 2009, 7395
  • [4] Probing the Radiative Limits of III-V Quantum Wells
    Welser, Roger
    Laboutin, Oleg
    Johnson, Wayne
    STATE-OF-THE-ART PROGRAM ON COMPOUND SEMICONDUCTORS 53 (SOTAPOCS 53), 2011, 41 (06): : 151 - 159
  • [5] Advancing the Coupling of III-V Quantum Dots to Photonic Structures to Shape Their Emission Diagram
    Bossavit, Erwan
    Yeromina, Oleksandra
    Mastrippolito, Dario
    Cavallo, Mariarosa
    Zhang, Huichen
    Gemo, Tommaso
    Colle, Albin
    Khalili, Adrien
    Shcherbakov, Andrei
    Nguyen, Lam Do
    Abadie, Claire
    Dandeu, Erwan
    Silly, Mathieu G.
    Gallas, Bruno
    Pierucci, Debora
    Degiron, Aloyse
    Reiss, Peter
    Lhuillier, Emmanuel
    ADVANCED OPTICAL MATERIALS, 2024, 12 (33):
  • [6] III-V quantum dots for optoelectronic device applications
    Fu, L.
    Jolley, G.
    Mokkapati, S.
    Majid, A.
    Lu, H. F.
    Tan, H. H.
    Jagadish, C.
    2009 4TH INTERNATIONAL CONFERENCE ON COMPUTERS AND DEVICES FOR COMMUNICATION (CODEC 2009), 2009, : 468 - 468
  • [7] Colloidal III-V quantum dots: a synthetic perspective
    Gazis, Theodore A.
    Cartlidge, Ashleigh J.
    Matthews, Peter D.
    JOURNAL OF MATERIALS CHEMISTRY C, 2023, 11 (12) : 3926 - 3935
  • [8] III-V semiconductor quantum dots with a magnetic impurity
    Chutia, Sucismita
    Bhattacharjee, A. K.
    PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, NO 10, 2009, 6 (10): : 2101 - 2106
  • [9] Different paths to tunability in III-V quantum dots
    Leon, R
    Lobo, C
    Clark, A
    Bozek, R
    Wysmolek, A
    Kurpiewski, A
    Kaminska, M
    JOURNAL OF APPLIED PHYSICS, 1998, 84 (01) : 248 - 254
  • [10] Defect formation in quantum dots of III-V semiconductors
    Jin-Phillipp, NY
    Phillipp, F
    ELECTRON MICROSCOPY 1998, VOL 3: MATERIALS SCIENCE 2, 1998, : 375 - 376
12345