Effect of Patterned Sapphire Substrate Shape on Light Output Power of GaN-Based LEDs

被引：28
|
作者：
Huang, Xiao-Hui [1 ,2 ]
Liu, Jian-Ping [1 ]
Fan, Ya-Ying [1 ]
Kong, Jun-Jie [1 ]
Yang, Hui [1 ]
Wang, Huai-Bing [1 ]
机构：
[1] Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Dept NanoDevice, Suzhou 215125, Peoples R China
[2] Chinese Acad Sci, Grad Univ, Beijing 100049, Peoples R China
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 2011年 / 23卷 / 14期
关键词：
GaN; illumination intensity; light-emitting diode (LED); patterned sapphire substrate (PSS); EXTERNAL QUANTUM EFFICIENCY; EMITTING-DIODES; ENHANCEMENT; EPILAYERS; BLUE;
D O I：
10.1109/LPT.2011.2142397
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An optical simulation including reflection and refraction is used to simulate the light illumination intensity of gallium nitride (GaN)-based light-emitting diodes (LEDs) on varied patterned sapphire substrates (PSS) with different slanted angles and fill factors (f). It is found that a micro pyramid array with a slanted angle from 25 degrees to 60 degrees is able to effectively improve illumination intensity which reaches to summit as the slanted angle is around 33 degrees. And illumination intensity enhances monotonously as increases. In addition to the mentioned work, epitaxial growth of GaN-LEDs on PSS is investigated for comparison. The output power of GaN-LEDs on PSS increases with simulated light illumination intensity increasing. The experimental results prove the simulation.
引用
收藏
页码：944 / 946
页数：3
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