The electron temperature in nanostructures subjected to a high electric field

被引:0
|
作者
Arora, VK [1 ]
机构
[1] Wilkes Univ, Dept Elect & Comp Engn, Wilkes Barre, PA 18766 USA
来源
2002 IEEE INTERNATIONAL CONFERENCE ON SEMICONDUCTOR ELECTRONICS, PROCEEDINGS | 2002年
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中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The drift-diffusion characteristics that limit the drift velocity to thermal velocity, appropriate to the dimensionality of nanostructures, are described. The concept of a hot electron and its temperature in a given context is discussed and simple analytical expressions extracted. These contextual definitions include: energy temperature, mobility temperature, Einstein-relation temperature both under ac and dc conditions, quantum temperature, and two-band intrinsic temperature. The dependence on the electric field is given in each case and the role of electric-field-induced quantum emission is delineated.
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页码:1 / 8
页数:8
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