Accurate determination of the matrix composition profile of Hg1-xCdxTe by secondary ion mass Spectrometry

被引：3
|
作者：
Wang, Larry [1 ]
Wang, Alice
Price, Steve
机构：
[1] Evans Analyt Gep, Sunnyvale, CA 95129 USA
[2] Raytheon Vis Syst, Goleta, CA 93117 USA
来源：
JOURNAL OF ELECTRONIC MATERIALS | 2007年 / 36卷 / 08期
关键词：
secondary ion mass spectrometry (SIMS); HgCdTe; composition analysis; depth calibration;
D O I：
10.1007/s11664-007-0131-7
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this report, we present a new secondary ion mass spectrometry (SIMS) analysis technique to provide accurate Cd composition profiles based on the measurement of HgCs+ and CdCs+ cluster ions. Study of Hg1-xCdx Te samples with different x values shows that x/(1 - x) is linearly proportional to HgCs+/ CdCs+ over the range of x = 0.2 to x = 0.9. This technique allows us to obtain an accurate Cd profile for a multilayer HgCdTe sample with different x values for each layer using a single standard with known x value.
引用
收藏
页码：910 / 912
页数：3
相关论文
共 50 条
  • [1] Accurate Determination of the Matrix Composition Profile of Hg1–xCdxTe by Secondary Ion Mass Spectrometry
    Larry Wang
    Alice Wang
    Steve Price
    [J]. Journal of Electronic Materials, 2007, 36 : 910 - 912
  • [2] Improved determination of matrix composition of Hg1-xCdxTe by SIMS
    Sheng, J
    Wang, L
    Lux, GE
    Gao, YM
    [J]. JOURNAL OF ELECTRONIC MATERIALS, 1997, 26 (06) : 588 - 592
  • [3] MEASUREMENT OF COMPOSITION IN HG1-XCDXTE EPILAYERS
    LIU, K
    CHU, JH
    LI, B
    TANG, DY
    [J]. APPLIED PHYSICS LETTERS, 1994, 64 (21) : 2818 - 2820
  • [4] ION-IMPLANTATION IN HG1-XCDXTE
    DESTEFANIS, GL
    [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1983, 209 (MAY): : 567 - 580
  • [5] Influence of mercury pressure on composition profile of LPE Hg1-xCdxTe film
    Li, B
    Chu, JH
    Chen, XQ
    Cao, JY
    Tang, DY
    [J]. NARROW GAP SEMICONDUCTORS 1995, 1995, (144): : 95 - 99
  • [6] Determination of cut-off wavelength and composition distribution in Hg1-xCdxTe
    Junhao Chu
    Yongsheng Gui
    Biao Li
    Dingyuan Tang
    [J]. Journal of Electronic Materials, 1998, 27 : 718 - 721
  • [7] DEPTH PROFILING OF HG1-XCDXTE BY SECONDARY-ION MASS-SPECTROMETRY - DETECTING CSX+ WITH CS+ ION-BEAM
    HAYASHI, S
    HASHIGUCHI, Y
    FUJII, S
    KITAZIMA, H
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (02): : 1169 - 1173
  • [8] Determination of cut-off wavelength and composition distribution in Hg1-xCdxTe
    Chu, JH
    Gui, YS
    Li, BO
    Tang, DY
    [J]. JOURNAL OF ELECTRONIC MATERIALS, 1998, 27 (06) : 718 - 721
  • [9] EFFECTIVE MASS AND SPIN SPLITTING IN HG1-XCDXTE
    ANTCLIFFE, GA
    [J]. PHYSICAL REVIEW B-SOLID STATE, 1970, 2 (02): : 345 - +
  • [10] MULTIPLE-ION SCATTERING IN HG1-XCDXTE
    BARTOLI, FJ
    ALLEN, RE
    HOFFMAN, CA
    MEYER, JR
    [J]. BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1980, 25 (03): : 437 - 438
12345