Accurate Characterization of Switching Losses in high-speed, high-voltage Power MOSFETs

被引：0

作者：

Arribas, Alejandro Pozo ^{[1
]}

Krishnamurthy, Mahesh ^{[1
]}

Shenai, Krishna ^{[2
]}

机构：

[1] IIT, Dept Elect & Comp Engn, Chicago, IL 60616 USA

[2] LoPel Corp, Naperville, IL USA

来源：

2015 IEEE INTERNATIONAL WORKSHOP ON INTEGRATED POWER PACKAGING (IWIPP) | 2015年

关键词：

Silicon Carbide; Power MOSFET; switching losses; inductive test; resistive test; high frequency;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Switching losses of high voltage devices such as SiC Power MOSFETs and Si IGBTs are usually characterized using inductive switching tests. However, for SiC Power MOSFETs, the operation at high switching speed arises several issues that compromise the accuracy of the values provided on the Datasheet for the switching losses. In this paper, these issues (load current, freewheeling diode, di/dt and parasitic inductances) will be discussed. Afterwards, a similar study will be performed for resistive switching conditions as an alternative and more robust method to characterize the switching losses of these devices. Finally, a complete map of the Turn-on and Turn-off losses of the SiC Power MOSFET SCT2080KE from Rohm will be provided.

引用

页码：95 / 98

页数：4

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