Determination of the density of ultrathin La films in La/B4C layered structures using X-ray standing waves

被引：6

作者：

Makhotkin, I. A. ^{[1
,2
]}

Louis, E. ^{[1
]}

van de Kruijs, R. W. E. ^{[1
]}

Yakshin, A. E. ^{[1
]}

Zoethout, E. ^{[1
]}

Seregin, A. Yu. ^{[2
]}

Tereschenko, E. Yu. ^{[2
]}

Yakunin, S. N. ^{[2
,3
]}

Bijkerk, F. ^{[1
,4
,5
]}

机构：

[1] FOM Inst Plasma Phys Rijnhuizen, NL-3439 MN Nieuwegein, Netherlands

[2] AV Shubnikov Inst Crystallog RAS, Moscow 119333, Russia

[3] RRC Kurchatov Inst, Moscow 123182, Russia

[4] Univ Twente, MESA, NL-7522 NB Enschede, Netherlands

[5] Univ Twente, Inst Nanotechnol, NL-7522 NB Enschede, Netherlands

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2011年 / 208卷 / 11期

关键词：

thin films; X-ray standing waves; MULTILAYER OPTICS; 6.7; NM; REFLECTIVITY; FLUORESCENCE; RADIATION; BORON;

D O I：

10.1002/pssa.201184256

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Using simultaneous analysis of both the grazing incidence X-ray reflectivity (GIXR) and the angular dependent fluorescence yield from ultrathin layer structures, the densities of thin La and LaN layers of 2-6 nm thickness enclosed by B4C layers have been determined with approximately 5% precision. The density of the La layer in these systems is found to be reduced to the bulk La value. This is explained by LaB6 interlayers formation. The density of LaN layers were similar to the bulk LaN value, which favors this compound as the most energetically stable in LaN/B4C layered systems. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：2597 / 2600

页数：4

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