Dealing with Non-Idealities in Memristor Based Computation-In-Memory Designs

被引：2
|
作者：
Gebregiorgis, Anteneh [1 ]
Singh, Abhairaj [1 ]
Diware, Sumit [1 ]
Bishnoi, Rajendra [1 ]
Hamdioui, Said [1 ]
机构：
[1] Delft Univ Technol, Comp Engn Lab, Delft, Netherlands
来源：
PROCEEDINGS OF THE 2022 IFIP/IEEE 30TH INTERNATIONAL CONFERENCE ON VERY LARGE SCALE INTEGRATION (VLSI-SOC) | 2022年
基金：
欧盟地平线“2020”;
关键词：
CIM; memristor; non-idealities; variability; accuracy;
D O I：
10.1109/VLSI-SoC54400.2022.9939618
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
Computation-In-Memory (CIM) using memristor devices provides an energy-efficient hardware implementation of arithmetic and logic operations for numerous applications, such as neuromorphic computing and database query. However, memristor-based CIM suffers from various non-idealities such as conductance drift, read disturb, wire parasitics, endurance and device degradation. These negatively impact the computation accuracy of CIM. It is therefore essential to deal with these non-idealities and fabrication imperfections in order to harness the full potential of CIM. This paper discusses the non-ideality challenges and provides potential solutions. Furthermore, the paper outlines the potential future directions for CIM architectures.
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页数：6
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