Temperature Characteristics Analysis of Triple-Junction Solar Cell under Concentrated Conditions using Spice Diode Model

Using spice diode model, the temperature characteristics of an InGaP/InGaAs/Ge triple-junction solar cell under concentrated light conditions were analyzed in detail. The current-voltage (I-V) characteristics of the single-junction solar cells (InGaP, InGaAs, and Ge solar cells) were measured at various temperatures. From dark I-V characteristics of each single-junction solar cell, the diode parameters and temperature exponents were extracted. The extracted diode parameters and temperature exponents were applied to the equivalent circuit model for the triple-junction solar cell, and the solar cell performance was calculated with considering the temperature characteristics of series resistance. There was good agreement between the measured and calculated I-V characteristics of the triple-junction solar cell at various temperatures under concentrated light conditions.